Introduction
The Samsung M393A4K40EB3-CWE is a 32GB DDR4-3200 ECC Registered DIMM for compatible enterprise servers. Its 2Rx4 organization is a key selection detail: two memory ranks are built from x4-width DRAM devices, so buyers should match more than capacity and speed when replacing an existing server DIMM.
Intel DDR4 RDIMM validation results list this model with CL22 timing, a B2 raw-card layout, and Samsung K4A8G045WE-BCWE 8 Gb x4 DRAM. These part-level identifiers are useful for procurement and maintenance teams that need to distinguish the exact module from 32GB DDR4-3200 RDIMMs using x8 devices or a different raw-card design.
At 3200 MT/s, DDR4-3200 provides up to 25.6 GB/s of theoretical transfer bandwidth per 64-bit memory channel. The installed speed still depends on the processor generation, BIOS qualification, memory-channel population, and DIMMs-per-channel configuration of the server.
The x4 device width deserves attention during compatibility checks. Some server platforms qualify x4 and x8 RDIMMs separately, and support for specific memory RAS features can depend on the platform and DRAM organization. For that reason, a 32GB 2Rx4 module should not be treated as automatically interchangeable with a 32GB 2Rx8 RDIMM simply because both are rated at 3200 MT/s.
For exact-part sourcing and server memory configuration support, we at Huaying Hengtong assist customers with enterprise server memory requirements.
Before installation, compare the existing DIMMs by module type, capacity, rank count, device width, speed, and part number. Also confirm the server vendor’s population rules. When DDR4-3200 is mixed with slower qualified memory, many platforms operate the populated channel at the highest common supported speed rather than keeping each DIMM at its individual rating.
Specifications
|
Product Model |
M393A4K40EB3-CWE |
|
Memory Type |
DDR4 |
|
Module Type |
Registered DIMM / RDIMM |
|
Application |
Server |
|
Capacity |
32GB |
|
Memory Speed |
3200 MT/s |
|
Speed Classification |
DDR4-3200 / PC4-25600R |
|
Memory Organization |
2Rx4 |
|
DRAM Component |
Samsung K4A8G045WE-BCWE / 8 Gb x4 |
|
Error Correction |
ECC Supported |
|
CAS Latency |
CL22 |
|
Operating Voltage |
1.2V |
|
Form Factor |
288-pin DIMM |